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產品分類

PTW20N50

Features

■ RDS(on) (Max 0.26 Ω )@VGS=10V

■ Gate Charge (Typical 90nC)

■ Improved dv/dt Capability, High Ruggedness

■ 100% Avalanche Tested

■ Maximum Junction Temperature Range (150°C)

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PTW9N90

Features

■ RDS(on) (Max 1.4 Ω )@VGS=10V

■ Gate Charge (Typical 47nC)

■ Improved dv/dt Capability, High Ruggedness

■ 100% Avalanche Tested

■ Maximum Junction Temperature Range (150°C)

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PTU50N03

60A , 25 V N-Channel MOSFET

Features

●RDS(ON) = 5.2mΩ @VGS = 10 V

●Low capacitance

●Optimized gate charge

●Fast switching capability

●Avalanche energy specified

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PTU7N65

650V N-Channe MOSFET

Features

●Low Intrinsic Capacitances

●Excellent Switching Characteristics

●Extended Safe Operating Area

●Unrivalled Gate Charge : 16 nC (Typ.)

●BVDSS=650V,ID=6.5A

●Lower RDS(on) : 1.5Ω (Max) @VG=10V

●100% Avalanche Tested

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PTU6N65

650V N-Channe MOSFET

Features

●Low Intrinsic Capacitances

●Excellent Switching Characteristics

●Extended Safe Operating Area

●Unrivalled Gate Charge : 16 nC (Typ.)

●BVDSS=650V,ID=6A

●Lower RDS(on) : 1.5Ω (Max) @VG=10V

●100% Avalanche Tested

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PTU6N60

600V N-Channe MOSFET

Features

●Low Intrinsic Capacitances

●Excellent Switching Characteristics

●Extended Safe Operating Area

●Unrivalled Gate Charge : 16 nC (Typ.)

●BVDSS=600V,ID=6A

●Lower RDS(on) : 1.5Ω (Max) @VG=10V

●100% Avalanche Tested

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PTU5N65

650V N-Channel MOSFET

Features

●Low Intrin sic Capacitances

●Excellent Switching Characteristics

●Extended Safe Operating Area

●Unrivalled Gate Charge : 15 nC (Typ.)

●BVDSS=650V,ID=4.5A

●Lower RDS(on) : 2.5Ω (Max) @VG=10V

●100% Avalanche Tested

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PTU2N80

HIGH VOLTAGE N-Channel MOSFET

600V N-Channel MOSFET

Features

●Low Intrinsic Capacitances

●Excellent Switching Characteristics

●Extended Safe Operating Area

●Unrivalled Gate Charge :12 nC (Typ.)

●BVDSS=800V,ID=2A

●Lower RDS(on) : 6.3 Ω (Max) @VG=10V

●100% Avalanche Tested

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PTP9540

P-Channel Enhancement Mode Power MOSFET

Description

The PTP9540 uses advanced trench technology and designto provide excellent RDS(ON) with low gate charge. It can beused in a wide variety of applications.

General Features

● VDS =-100V,ID =-30ARDS(ON) <58mΩ @ VGS=-10V (Typ:50mΩ)

● Super high dense cell design

● Advanced trench process technology

● Reliable and rugged

● High density cell design for ultra low On-Resistance

Application

● Portable equipment and battery powered systems

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PTP8580

Description

The PTP8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

General Features

● VDS =85V,ID =80ARDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Special designed for convertors and power controls

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

●Power switching application

●Hard switched and High frequency circuits

●Uninterruptible power supply

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PTP7190

Description

The PTP7190 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features

● VDS = 71V,ID =90ARDS(ON) < 6.8mΩ @ VGS=10V (Typ:5.9mΩ)

● Special process technology for high ESD capability

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

Application

●Power switching application

●Hard switched and High frequency circuits

●Uninterruptible power supply

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PTP1579

Description

The PTP1579 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features

● VDS =150V,ID =79ARDS(ON) < 19mΩ @ VGS=10V (Typ:16mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

●Power switching application

●Hard switched and high frequency circuits

●Uninterruptible power supply

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PTP1550

Description

The PTP1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features

● VDS =150V,ID =50A

RDS(ON) <23mΩ @ VGS=10V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

●Power switching application

●Hard switched and High frequency circuits

●Uninterruptible power supply

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PTF50M06

Features

? 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V

? Low gate charge ( typical 33nC)

? Fast switching

? 100% avalanche tested

? Improved dv/dt capability

General Description

This Power MOSFET is produced using PHILOP’s advance dplanar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high

rugged avalanche characteristics. These devices are well suited

for high efficiency switch mode power supplies, active power

factor correction, electronic lamp ballasts based on half bridge

topology.

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PTP8N60

Features

■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V

■ Gate charge (Typical 30nC)

■ High ruggedness

■ Fast switching

■ 100% AvalancheTested

■ Improved dv/dt capability

General Description

This Power MOSFET is produced using PHILOP’s advance dplanar stripe,DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a highrugged avalanche characteristics. These devices are well suitedfor high efficiency switch mode power supplies, activepowerfactorcorrection,electroniclampballastsbasedonhalfbridgetopology

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PTP5N65-E

Features

●Low Intrinsic Capacitances

●Excellent Switching Characteristics

●Extended Safe Operating Area

●Unrivalled Gate Charge : 15 nC (Typ.)

●BVDSS=650V,ID=4.5A

●Lower RDS(on) : 2.7Ω (Max) @VG=10V

●100% Avalanche Tested

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PTP2N80

800V N-Channel MOSFET

Features

●Low Intrinsic Capacitances

●Excellent Switching Characteristics

●Extended Safe Operating Area

●Unrivalled Gate Charge :Qg= 13nC (Typ.)

●BVDSS=800V,ID=3A

●RDS(on) : 5 Ω (Max) @VG=10V

●100% Avalanche Tested

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PTP01H11

Description

The PTP01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

General Features

● VDS =100V,ID =110ARDS(ON) <9mΩ @ VGS=10V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

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PTP01H10

Description

The PTP01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features

● VDS = 100V,ID =100ARDS(ON) < 11mΩ @ VGS=10V (Typ:9.9mΩ)

● Special process technology for high ESD capability

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

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PTF12N60

Features

■ RDS(on) (Max 0.70 Ω )@VGS=10V

■ Gate Charge (Typical 50nC)

■ Improved dv/dt Capability, High Ruggedness

■ 100% Avalanche Tested

■ Maximum Junction Temperature Range (150°C)

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PTF10N65

Features

■ RDS(on) (Typical 0.70 Ω )@VGS=10V

■ Gate Charge (Typical 45nC)

■ Improved dv/dt Capability, High Ruggedness

■ 100% Avalanche Tested

■ Maximum Junction Temperature Range (150°C)

General Description

This Power MOSFET is produced using Wisdom’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high

rugged avalanche characteristics. These devices are well suited

for high efficiency switch mode power supplies, active power factor

correction, electronic lamp ballasts based on half bridge topology.

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PTF10N60

Features

10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V

Low gate charge ( typical 48nC)

High ruggedness

Fast switching

100% avalanche tested

Improved dv/dt capability

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PTF8N60

Features

■ RDS(on) (Max 1.2 Ω )@VGS=10V

■ Gate Charge(Typical 28nC)

■ Improved dv/dt Capability, High Ruggedness

■ 100% Avalanche Tested

■ Maximum Junction Temperature Range(150°C)

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PTF5N60

Features

■4.5A,600v,RDS(on)=2.5Ω@VGS=10V

■ Gate charge (Typical 17nC)

■ High ruggedness

■Fast switching

■100% AvalancheTested

■Improved dv/dt capability

General Description

This Power MOSFET is producedusingPHILOP’s advancedplanar stripe, DMOS technology.This latest technology has beenespecially designed to minimizeon-state resistance, have a highrugged avalanche characteristics, suchas fastswitching time,lowon resistance.low gate charge and especially excellentavalanchecharacteristics.Thispower MOS ET is usually usedatF ACadaptors, on the batterychargerand SMPS

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PTF3N80

Features

■ RDS(on) (Max 5.0 Ω )@VGS=10V

■ Gate Charge(Typical 15.0nC)

■ Improved dv/dt Capability, High Ruggedness

■ 100% Avalanche Tested

■ Maximum Junction Temperature Range(150°C)

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PTD7580

Description

The PTD7580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

General Features

● VDS = 75V,ID =80ARDS(ON) <8mΩ @ VGS=10V（Typ：6.5mΩ）

● Special process technology for high ESD capability

● Special designed for convertors and power controls

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

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PTD630

200V N-Channel MOSFET

Features

●Low Intrinsic Capacitances

●Excellent Switching Characteristics

●Extended Safe Operating Area

●Unrivalled Gate Charge : 22 nC (Typ.)

●BVDSS=200V,ID=9A

●Lower RDS(on) : 0.4 Ω (Max) @VG=10V

●100% Avalanche Tested

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PTD50N03

60A , 25 V N-Channel MOSFET

Features

●RDS(ON) = 5.2mΩ @VGS = 10 V

●Low capacitance

●Optimized gate charge

●Fast switching capability

●Avalanche energy specified

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PTD30P55

DescriptionThe PTD30P55 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features

● VDS =-55V,ID =-30ARDS(ON) <40mΩ @ VGS=-10V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

Application

●Power switching application

●Hard switched and high frequency circuits

●Uninterruptible power supply

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PTD7N65

650V N-Channel MOSFET

Features

●Low Intrinsic Capacitances

●Excellent Switching Characteristics

●Extended Safe Operating Area

●Unrivalled Gate Charge : 16 nC (Typ.)

●BVDSS=650V,ID=6.5A

●Lower RDS(on) : 1.5Ω (Max) @VG=10V

●100% Avalanche Tested

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PTD6N65

650V N-Channel MOSFET

Features

●Low Intrinsic Capacitances

●Excellent Switching Characteristics

●Extended Safe Operating Area

●Unrivalled Gate Charge : 16 nC (Typ.)

●BVDSS=650V,ID=6A

●Lower RDS(on) : 1.5Ω (Max) @VG=10V

●100% Avalanche Tested

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PTD6N60

600V N-Channel MOSFET

Features

● Low Intrinsic Capacitances

● Excellent Switching Characteristics

● Extended Safe Operating Area

● Unrivalled Gate Charge : 16 nC (Typ.)

● BVDSS=600V,ID=6A

● Lower RDS(on) : 1.5Ω (Max) @VG=10V

● 100% Avalanche Tested

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PTD5N65

650V N-Channel MOSFET

Features

●Low Intrinsic Capacitances

●Excellent Switching Characteristics

●Extended Safe Operating Area

●Unrivalled Gate Charge : 15 nC (Typ.)

●BVDSS=650V,ID=4.5A

●Lower RDS(on) : 2.5Ω (Max) @VG=10V

●100% Avalanche Tested

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PTD5N50

N-Channel MOSFET

Features

■ RDS(on) (Max 1.5Ω) @ VGS=10V

■ GateCharge(Typical 20nC)

■ Improved dv/dt Capability, High Ruggedness

■ 100% Avalanche Tested

■MaximumJunctionTemperatureRange(150°C)

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PTD2N80

HIGH VOLTAGE N-Channel MOSFET600V N-Channel MOSFET

Features

●Low Intrinsic Capacitances

●Excellent Switching Characteristics

●Extended Safe Operating Area

●Unrivalled Gate Charge :12 nC (Typ.)

●BVDSS=800V,ID=2A

●Lower RDS(on) : 6.3 Ω (Max) @VG=10V

●100% Avalanche Tested

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產品中心

PT8205 SOT-23-6L

PT8205H

PT8205+TSSOP8

DW01AP

DW01A

PTW20N50

PTW9N90

PTU50N03

PTU7N65

PTU6N65

PTU6N60

PTU5N65

PTU2N80

PTP9540

PTP8580

PTP7190

PTP1579

PTP1550

PTF50M06

PTP8N60

PTP5N65-E

PTP2N80

PTP01H11

PTP01H10

PTF12N60

PTF10N65

PTF10N60

PTF8N60

PTF5N60

PTF3N80

PTD7580

PTD630

PTD50N03

PTD30P55

PTD7N65

PTD6N65

PTD6N60

PTD5N65

PTD5N50

PTD2N80